US9298197（既出）
As mentioned, FIG. 12A illustrates a schedule of original setpoint temperatures according to an embodiment.
言及されるように、図１２Ａは、ある実施の形態に従って元の設定点温度のスケジュールを示す。
The schedule in this example is defined over a period of 24 hours, and defines an indoor temperature control trajectory 904 that ranges between 71° F. and 73° F（＊単位繰り返し）.
この例におけるスケジュールは、２４時間の期間に亘って規定され、７１°Ｆと７３°Ｆとの間の範囲の屋内温度制御軌跡９０４を規定する。
EP2928671（既出）
For example, some parts may need to survive usage in some airframe locations that have in-service temperature ranges from around -54 degrees Celsius（＊度、摂氏）to around 225 degrees Celsius（＊単位繰り返し）.
US7515986
In some embodiments, the heaters 108 are quartz rod elements, which are stable at temperatures in excess of 400° Celsius（＊度、摂氏）. In an exemplary embodiment, the heaters 108 may produce and maintain a consistent and stable temperature between 20° Celsius and 400° Celsius（＊単位繰り返し）.
US20190230954
A relatively large diameter roller may be provided with the gum carried preferably over at least about ¼ a rotation (at least about 90 degrees) to provide a long residence time to facilitate heat transfer out of the gum and to the chilled roller (chilled to a roller surface temperature between −15° C. and 60° C（＊単位繰り返し）.; and preferably between about 15° C. and 25° C.).
US8785261
14. A method of fabricating a transistor comprising:
providing a structural substrate comprising silicon;
forming a formation substrate on the structural substrate, wherein the formation substrate comprises a silicon carbide layer;
forming a graphene layer on the formation substrate, wherein forming the graphene layer comprises annealing the silicon carbide layer in a gas selected from the group comprising gallium gas, germanium gas, germane, and digermane at temperatures of about 700-900° C（＊ハイフン；単位繰り返し無し）. and forming the graphene layer by hydrocarbon chemical vapor deposition;
US9944784
In some embodiments, the temperature of the release solution is lower than the temperature at which the solution containing the proteins was contacted with the crosslinked polymer particles. In some cases, the protein solution and the rinse solution are at a temperature between 30° C. and 60° C（＊単位繰り返し）.
US20190288176
In some embodiments, baking of the substrate 302 may occur before or after any of the above actions. For example, the substrate 302 may be prebaked to remove surface water. In some embodiments, prebaking may be performed at a temperature in the range of 200° C. to 400° C., including all values and ranges therein, for a time of 30 to 60 minutes, including all values and ranges therein. After application of the photoresist, a post application bake may occur, wherein at least a portion of the solvents in the photoresist are driven off. A post application bake is, for example, performed at temperatures in the range of 70° C. to 140° C（＊単位繰り返し）., including all values and ranges therein, for a time period in the range of 60 seconds to 240 seconds, including all values and ranges therein.
US9147677
As shown in the TLP data 200 of FIG. 7A, the voltage clamp device can have a holding voltage of about 2 V and a trigger voltage between about 9 V and 9.5 V（＊単位繰り返し）. However, other values are possible, such as voltages that depend on geometric structural features and/or fabrication processes.
US9512537
FIG. 5A shows an L* a* b* color space plot indicating how a* and b* values change as a function of applied voltage ranging from（＊between?）60 volts and（＊to?) 110 volts（＊単位繰り返し）. As shown, a* values range from about 0 to about −1.3 using applied voltages ranging from 60 volts and 110 volts, corresponding to various amounts of green color. Increasing the voltage from 60 volts to about 100 volts（＊単位繰り返し）results in increasing amounts of green color.
US20190136224
FIG. 19 illustrates spatial electric field distribution along a longitudinal axis of the constriction within the flow path. The simulated electric field curves for applied voltages ranging between 0.5 kV and 2.5 kV（＊単位繰り返し）are shown and demonstrate a linear gradient along the centerline of the pipette tip channel. The geometric constriction linearly amplifies the electric field experienced by the cells. An applied voltage of 2.5 kV resulted in Emax=12.5 kV/cm.
US9269502
In some embodiments, the capacitance and power output are measured using cyclic voltametry (CV), chronopotentiometry (CP) and impedance spectroscopy at various voltages (ranging from 1.0-2.5 V（＊ハイフン；単位繰り返し無し）maximum voltage) and current levels (from 1-10 mA) on a Biologic VMP3 electrochemical workstation. In this embodiment, the capacitance may be calculated from the discharge curve of the potentiogram using the formula:
US10353449
At 302, an initial VID and Frequency are set, and the CPU is driven with suitable software, e.g., suitable work load or benchmark application. In some embodiments, for example, the VID and frequency could be set to a Max Non-Turbo state. Regardless, in most situations, the value should be sufficiently low for encountered devices (e.g., being tested, adjusted, and/or verified) so that it doesn't start off with operating VR parameters exceeding specified limits. For example, with a CPU rated to operate up to 100 W at voltages ranging from 1.1 to 1.5 V（＊単位繰り返し無し）, the initial VID might be for 1.3V with a load (determined by frequency and received Vin) of about 90 W.
US7738350
A first set of current-voltage (I-V) curves 1102 illustrate when the tip 306 was used to write to the diamond-like carbon layer 106. The tip 306 was positioned at nine different locations on the diamond-like carbon layer 106 and the current-voltage (I-V) curves 1102 were collected from each of the locations. Note that the current increased nonlinearly until it jumped when the voltage was increased above the threshold voltage. For the illustrated embodiment, current jumps occurred at the threshold voltages ranging from approximately 0.9 to 1V（＊単位繰り返し無し）.
US20220093790
In accordance with an embodiment of the present disclosure, a high voltage GaN transistor technology enables power delivery solutions that are more efficient than what is possible today. Servers and graphics products are powered by power delivery solutions with input voltages ranging between 48V to 72V（＊単位繰り返し）.
