"BACKGROUND OF THE INVENTION
The manufacture（製造）of electronic integrated circuits relies heavily on the use of image projection techniques to expose（露光）resist-coated wafers with light or X-rays. The patterns formed by this exposure（露光）determine the various circuit connections and configurations. In any exposure method, accuracy of the projected image is a prime consideration. This accuracy is particularly important in the manufacture of high density random access memories (RAM) in which the yield（歩留り）and ultimately the cost of the components depend heavily on meeting tight exposure placement requirements. With the increasing demand for high performance integrated circuits, the techniques to fabricate（作製）semiconductor substrates for microelectronic devices and other purposes have been undergoing continuous development（絶え間ない進歩を経て）and now include the use of scanning-electron beam lithography systems, both for producing high quality lithographic masks and for direct pattern generation.
Electron beam lithography systems use electron sources that emit electrons at all angles. The electrons are then constrained（制約、制限）by the remainder of the system into a narrowly diverging beam. Succeeding lenses then focus the beam into one or more cross-overs before the beam reaches the target. In these systems, electron beams are formed by an electron beam column that, at a minimum（少なくとも、最低限）, includes an electron source at an object plane and a target at the image plane. Usually the electron beam column includes at least an electron source at the object plane, one or more lenses, one or more apertures, and the target at the image plane. Columns for electron beam lithographic mask exposure include at least an electron source at the object plane, one or more lenses, one or more apertures, one or more deflectors, a set of beam blankers (which can be driven to stop the beam reaching the target), and a target at the image or mask plane.
In direct pattern generation where the electron beam system creates a pattern directly on a chip covered with resist material, the often complicated and time consuming mask-making process is eliminated. However, one of the key economic considerations in a direct electron beam lithography system for a production environment is the throughput achieved by direct writing（直接描画）relative to a system using a series of masks. This is of particular importance, because direct writing is necessarily a serial output process. Hence, time constraints become even more critical in direct pattern generation.
As manufacturers seek ever higher writing speeds, other significant problems also appear. These problems arise often as a result of the relationship among（関係）these various parameters. For example, as the writing speed increases, the current density must be increased to maintain the same exposure on the resist. However, higher current densities lead to beam broadening due to electron-electron interactions, thereby deleteriously（悪影響、悪化）increasing the line width. Also, a shortened exposure time further requires a shortened blanking time, since the rise time（立上り時間）of the blanker is closely related to the accuracy of the exposure of each pixel, and is also a major concern in avoiding extraneous（無関係）exposure during blanking. Hence, blanking time in raster scan type electron beam devices remains one of the key factors limiting throughput.
The electron optical column delivers a variable sized（様々なサイズの）spot with constant current density, the spot current increasing as the square of（二乗に比例して）spot size. Correct resist exposure requires a certain number of coulombs per unit area. From the resist sensitivity and beam current density we can obtain the time required to expose the area covered by the spot. The time taken to expose a mask is this time multiplied by the mask area divided by the spot area.
For the purpose of understanding the description of the invention（発明の理解のため）, assume the spot to be（であると想定する）square, equal to the address grid, and all the mask area to be rastered. For（に対し）a beam current density J and resist sensitivity S the exposure time per spot (pixel rate) is S/J secs. The given variable is resist sensitivity, beam current density and pixel exposure rate must be matched to achieve the correct dosage.
Over much of the operating range the MEBES machine is not making best use of the available beam current." (US6429443)
"Lithography systems are used for creating patterns, such as features（形状、特徴） of an electronic circuit, on a semiconductor substrate. In one type of suggested electron beam lithography system, a light beam from a light source is demagnified（縮小）and focused on a photocathode, which then converts the light beam into an electron beam (see, for example, U.S. Pat. No. 4,820,927 to Langner et al.). By modulating the light source and by scanning（スキャン）the electron beam using an electron optics（単数）, a desired pattern can be written（描画）on a mask blank (for later photolithography) or directly on a semiconductor substrate (direct-write lithography). In this disclosure, the term "writing plane" includes semiconductor substrates, lithography mask blanks, and like（同様の）workpieces.
A multiple beam electron beam lithography system ("multi-beam system") works（動作）similarly as described above except that multiple（複数の）light sources are employed (see, for example, U.S. Pat. No. 5,039,862 to Smith et al. and U.S. Pat. No. 5,684,360 to Baum et al.). The light sources are typically arranged in an array（アレイ状に）and individually modulated to create the pattern. The placement（配置）of the light sources relative to one another in the array is critical in a multi-beam system because a light source placement error directly translates to（反映される、つながる）an electron beam writing error. In the fabrication（作製）of 0.1 micrometer devices, for example, electron beam writing errors less than 10 nm are required. Further, the rate at which the light sources are modulated to create the pattern affects the throughput of the multi-beam system. It is desirable to increase the modulation rate of the light sources to achieve a corresponding increase in the number of writing planes that can be processed.
The photocathode and electron optics of a multi-beam system are typically contained in an evacuated（減圧、排気、真空）electron beam column. It is desirable to（＊望まれ、必要）shorten the length of the column to reduce interaction between electrons ("electron-electron interaction") in an electron beam. Electron-electron interaction blurs the electron beam, thereby degrading（悪化、低下）the resolution of the pattern written on the writing plane. It is also desirable to shorten the length of the column to simplify its design.(US6429443)
US9055050(Facebook, Inc.)
TECHNICAL FIELD
This disclosure generally relates to application authentication and more specifically relates to a user granting a specific application access to the user's information through the user's mobile device.
BACKGROUND
Some software applications, whether（であろうが、関わらず）they are web based or desktop based, whether they are designed for mobile or stationary devices, may need to access information of（の情報）their users in order to function properly. However, not all users may wish to grant every software application access to（アクセスを認める）their information, especially their private information. Thus, a software application may need to request access to a user's information from the user before the user can use the software application.
