US12206106(ENOVIX CORP [US])
[0106] Referring to FIGS. 14 A- 14 H, further aspects according to the present disclosure are described. Specifically, it is noted that the electrode assembly 106 comprises a population of electrode structures 110 , a population of electrode current collectors 136 , a population of separators 130 , a population of counter-electrode structures 112 , a population of counter-electrode collectors 140 , and a population of unit cells 504 . As also shown by reference to FIGS. 1 B and 2 A, members of the electrode and counter-electrode structure populations are arranged in an alternating sequence in the longitudinal direction. Each member of the population of electrode structures 110 comprises an electrode current collector 136 and a layer of an electrode active material 132 having a length LE that corresponds to the Feret diameter as measured in the transverse direction between first and second opposing transverse end surfaces 502 a,b of the electrode active material layer (see, e.g., FIG. 15 A) and a height HE that corresponds to the Feret diameter of the electrode active material layer as measured in the vertical direction between first and second opposing vertical end surfaces 500 a,b of the electrode active material layer 132 (see, e.g., FIG. 17 ).
US10577768(TRENDSETTER VULCAN OFFSHORE INC [US])
[0048] Each tension member 160 includes a first or distal end 160 a coupled to frame 47 of BOP 41 , and a tensioned span or portion 161 extending from the corresponding winch 140 to end 160 a . As best shown in FIG. 1, each distal end 160 a is coupled to frame 47 of BOP 41 at a height H measured vertically from the sea floor 12 and at a lateral distance D measured radially and horizontally from central axis 55 . In this embodiment, four uniformly circumferentially-spaced anchors 110 and associated tension members 160 are provided. In addition, in this embodiment, height H of each end 160 a is the same, lateral distances D to each end 160 a is the same. For most subsea applications, lateral distance D is preferably between 5.0 and 15.0 feet, and more preferably about 10.0 ft. However, it should be appreciated that lateral distance D may depend, at least in part, on the available connection points to the frame 47 of BOP 41 . As will be described in more detail below, each height H is preferably as high as possible but below LMRP 42 , and may depend on the available connection points along frame 47 of BOP 41 .
US9326482(SKORPIOS TECHNOLOGIES INC [US])
[0018] FIGS. 1A and 1B show a cross section view of a composite semiconductor device according to some embodiments of the present invention. In FIG. 1A, a silicon structure 110 (an example of the first semiconductor structure) is shown. The silicon structure 110 comprises a first wall 104 - 1 , a second wall 104 - 2 , and a first bottom surface 112 . The first wall 104 - 1 , the second wall 104 - 2 , and the first bottom surface 112 form a recess in the silicon structure 110 . Protruding from the first bottom surface 112 is a first pedestal and a second pedestal. Each pedestal has a top portion 114 that is a height h above the first bottom surface 112 . The silicon structure 110 also comprises a first waveguide 115 - 1 and a second waveguide 115 - 2 . The first waveguide 115 - 1 directs light horizontally through the first wall 104 - 1 into and/or out of the recess. The second waveguide guides light horizontally through the second wall 104 - 2 into and/or out of the recess. The first waveguide 115 - 1 and the second waveguide 115 - 2 are a height x above the first bottom surface 112 . In some embodiments, the pedestals are of the same material as the first semiconductor structure. In some embodiments, the pedestals are made of a different material than the first semiconductor structure. In some embodiments, the pedestals are made of a combination of both the same material of the first semiconductor structure and different material (e.g., as described later in reference to FIG. 4B). In the description above, a silicon substrate was used as an example, but other materials can be used.
US10702598(CANADIAN NAT RAILWAY CO [CA])
[0030] As embodied and broadly described herein, the invention provides a method comprising discharging solid bitumen pellets to form a pile of pellets, the pile including 100 solid bitumen pellets characterized by having a probability, per pellet, of failing an impact-resistance test that does not exceed 0.25, when the pellets are dropped from a height H, the step of discharging the solid bitumen pellets to form the pile including controlling the height from which the pellets are dropped to form the pile such that the height does not exceed H.
US8757548(BOEING CO [US])
[0024] x=[PEVEQBE](Eq.1)
In this embodiment, the state x consists of a position P E in the ECEF frame, a velocity V E in the ECEF frame, and a quatemion Q B E defining a body frame attitude of the vehicle relative to the ECEF frame. In such embodiment, the body frame is defined separately for each player. For example, the body frame may be consistent with typical “aircraft coordinates” such that it consists of an orthogonal coordinate axis frame with a positive x axis through the nose of the aircraft, a positive y-axis through the starboard side of the aircraft and a z axis positive down.
US8988759(INVENTION SCIENCE FUND I LLC)
[0059] In other exemplary implementations of apparatus 100 , the effective position of the selected spatial profile may be changed such that a portion of the energy of the modified electromagnetic wave has a frequency translated outside a pre-defined frequency band of a receiver of the modified electromagnetic wave. (See e.g., FIG. 14B). Controller 130 may vary the effective position of the selected spatial profile so that a portion of the energy of the modified electromagnetic wave is shifted in frequency by a fixed amount relative to the incident electromagnetic wave. (i.e. the modified electromagnetic wave approximates a wave reflected from a surface moving continuously at velocity v).
