Optical spectrometer（分光計）(Wikipedia)
"Spectrometers are used in many fields. For example, they are used in astronomy to analyze the radiation from astronomical objects and deduce chemical composition. The spectrometer uses a prism or a grating to spread （広げる、分散）the light from a distant object into a spectrum. This allows astronomers to detect many of the chemical elements by their characteristic spectral fingerprints."
"In the original spectroscope（分光器）design in the early 19th century, light entered（入射）a slit and a collimating lens transformed the light into a thin beam of parallel rays(平行光線). The light then passed through a prism (in hand-held spectroscopes, usually an Amici prism) that refracted the beam into a spectrum because different wavelengths were refracted different amounts due to dispersion（分散、分光？）. This image was then viewed through a tube with a scale that was transposed upon the spectral image, enabling its direct measurement."
"A spectrograph（分光器）is an instrument that separates（分光する？）an incoming wave into a frequency spectrum. There are several kinds of machines referred to as spectrographs, depending on the precise nature of the waves. The first spectrographs used photographic paper as the detector."
Spectroscopy（分光法、分光学）(Wikipedia)
"Spectroscopy /spɛkˈtrɒskəpi/ is the study of the interaction between matter and electromagnetic radiation.[1][2] Historically, spectroscopy originated through the study of visible light dispersed（分散、分光？）according to its wavelength, by a prism."
分光法（ウィキペディア）
「spectroscopy の語は、元々は光をプリズムあるいは回折格子でその波長に応じて展開（disperse?）したものをスペクトル (spectrum) と呼んだことに由来する。」
What is Spectroscopy（分光法、分光学）? (Spectroscopy)
"Spectroscopy pertains to the dispersion（分散、分光？）of an object's light into its component colors (i.e. energies)."
How does a Spectrometer work?
"a collimating mirror, which parallelizes（平行化）the beam of light," ..."diffraction grating! This optical element disperses（分散；分光する？）the parallel beams of light into their component colors/wavelengths/energies."
Monochromator (Wikipedia) （発音：マナクロウメイタ）
"A monochromator can use either the phenomenon of optical dispersion（光学分散）in a prism, or that of diffraction using a diffraction grating, to spatially separate（空間的に分散；分光する？）the colors of light. It usually has a mechanism for directing the selected color to an exit slit. Usually the grating or the prism is used in a reflective mode. A reflective prism is made by making a right triangle prism (typically, half of an equilateral prism) with one side mirrored. The light enters through the hypotenuse（斜辺）face and is reflected back through it, being refracted twice at the same surface. The total refraction, and the total dispersion（分散）, is the same as would occur if an equilateral prism were used in transmission mode."
モノクロメータ（ウィキペディア）
「モノクロメーターは広範囲の波長の光を空間的に分散(disperse, separate)させ、それをスリットなどで狭い範囲の波長のみを取り出す分光器である。初期のこの型の分光器はスリットを通った光をレンズやミラーにより平行光にしたのち、プリズムを通すことで光を分散(disperse)させた。プリズムを通るときに光は波長により異なった角度で屈折するので、光を分散(disperse)することができる。」
Eyeglass prescription (Wikipedia)
- DV is an abbreviation for distance vision（遠視力、遠見、遠用視力）. This specifies the part of the prescription designed primarily to improve far vision（遠方視力）. In a bifocal lens, this generally indicates what is to be placed in the top segment.
- NV is an abbreviation for near vision（近見視力）. This may represent a single-vision lens prescription to improve near work, or the reading（近用）portion of a bifocal lens. Some prescription forms use ADD in place of NV with a single box to indicate the additional refractive power（屈折力）to be added to the spherical power（球面度数）of each eye.
- OD is an abbreviation for oculus dexter, Latin for right eye from the patient's point of view. Oculus means eye.
- OS is an abbreviation for oculus sinister, Latin for left eye from the patient's point of view.
- OU is an abbreviation for oculi uterque, Latin for both eyes.
N.B.: In some countries, such as the United Kingdom RE (right eye), LE (left eye), and BE (both eyes) are used. Sometimes, just right and left are used.
- SPH is an abbreviation for spherical correction. This corrects refractive error of the eye with a single convergent or divergent refractive power in all meridians（経線）.
- CYL is an abbreviation for cylindrical correction. This corrects astigmatic（乱視）refractive error of the eye by adding or subtracting power（度数）cylindrically in a meridian specified by the prescribed axis.
- AXIS is present only if there is a value for CYL. This indicates the angle in degrees of one of two major meridians the prescribed cylindrical power is in. Which major meridian is referenced is indicated by the cylindrical correction being in plus or minus notation. The axis is measured on an imaginary semicircle with a horizontal baseline that starts with zero degrees in the 3 o'clock direction (as viewed by the person making the measurement), and increases to 180 degrees in a counter-clockwise direction.
- ADD is an abbreviation for Near（近用）Addition. This is the additional correction required for reading.
Most eyeglass prescriptions will contain values here. The spherical and cylindrical columns contain lens powers in diopters（ディオプトリ、ジオプトリ、視度）(see below).
Prism and Base are usually left empty, as they are not seen in most prescriptions. Prism refers to a displacement （位置ずれ）of the image through the lens, and is used to treat eye muscle imbalances or other conditions (see vergence dysfunction) that cause errors in eye orientation or fixation（固視）. Prism correction is measured in prism diopters, and Base refers to the direction of displacement.
- Pupillary Distance（瞳孔間距離）(PD) is the distance between pupil centers, usually expressed in millimeters. It is sometimes known as the interpupillary Distance（瞳孔間距離）(IPD). It is written as two values if the prescription is for bifocals or progressive lenses - these are the pupillary distances for the distance（遠用）and near（近用）fixation (essentially, the upper and lower part of the lenses). They differ due to pupillary convergence when looking at near objects. Additionally, an eyeglasses prescription may include a monocular pupillary distance ("monocular PD"). These measurements indicate, in millimeters, the distances from the center of each pupil to the center of the nose where the center of the frame bridge rests. PD measurements are essential for all spectacle（眼鏡）dispensings（処方？）, monocular PDs being essential in progressive lenses and for those with high prescription. PDs can be measured using a pupilometer or by using a ruler. In some countries, such as the United Kingdom, PD measurement is not a legal requirement as part of the prescription and is often not included."
Dioptre (Wikipedia)
The fact that optical powers（屈折力？）are approximately additive enables an eye care professional to prescribe（処方）corrective（補正、矯正）lenses as a simple correction to the eye's optical power, rather than doing a detailed analysis of the entire optical system (the eye and the lens). Optical power can also be used to adjust a basic prescription for reading（近用、読書用）. Thus an eye care professional, having determined that a myopic (nearsighted) person requires a basic correction of, say, −2 dioptres（ディオプトリ、ジオプトリ）to restore normal distance vision（遠用、遠見視力）, might then make a further prescription of 'add 1' for reading, to make up for lack of accommodation（調節） (ability to alter focus). This is the same as saying that −1 dioptre lenses are prescribed for reading."
US9411173
(Abstract)
"A spectacle（眼鏡）lens is disclosed. The disclosed lens provides a vision correcting area for the correction of a wearer's refractive error. The viewing correction area provides correction for non-conventional refractive error to provide at least a part of the wearer's vision correction. The lens has a prescription based on a wave front analysis of the wearer's eye and the lens can further be modified to fit within an eyeglass frame."
"When the electro-active layer is activated, its index changes, and the refractive power of the diffraction pattern becomes additive to the substrate lens. For example, if the substrate lens has a power of −3.50 diopter（ジオプトリ）, and the electro-active diffractive layer has a power when activated of +2.00 diopter, the total power of the electro-active lens assembly is −1.50 diopter. In this way, the electro-active lens allows for near vision（近用）or reading. In other embodiments, the electro-active layer in the activated state may be index matched to the lens optic."
"In many cases, the wearer will require spherical correction for distance（遠用）, near, and/or intermediate vision."
US6199984
"The use of ophthalmic lenses for the correction of ametropia is well known. For example, multifocal lenses, such as progressive addition lenses (“PALs”), are used for the treatment of presbyopia. Typically, a PAL provides distance（遠用）, intermediate, and near（近用）vision zones in a gradual, continuous progression of increasing dioptric power. PALs are appealing to the wearer because the lenses are free of the visible ledges between the zones of differing optical power that are found in other types of multifocal lenses, such as bifocals and trifocals."
Eye Doctors (WebMD)
ophthalmologist: physician, went to medical school, provide total eye care
optometrist: non-physician, perform eye exams, priscribe and fit eyeglasses
optician: eye glasses and contact lenses
Presbyopia（老眼）American Optometric Association
presby-: old age, older, elder, priest (Presbyterian:長老派)
-opia: vision (myopia: nearsightedness; hyperopia: farsightedness; diplopia: 複視)
Astigmatism（乱視）
stigma: spot, mark, or "label indicating deviation from a norm" (Merriam-Webster Unabridged)
Cylindrical power（乱視度、乱視屈折力）日本工業規格 眼鏡レンズの用語
Common Vision Defects, Effect on Accommodation (HyperPhysics, Light and Vision)
眼科の基礎知識（メニコン コンタクトレンズ百科事典）
US6061435
"It is understood, of course（もちろん、言うまでもなく）, that this is merely by way of example and not of limitation（例示、非限定）."
US8062975
"A need（必要、需要）continues to grow for more complex semiconductor (SC) devices and circuits able to（できる、可能）operate at higher and higher frequencies and handle（取り扱う、対応）increasing amounts of power and have lower unit cost. Many of these requirements create conflicting demands on semiconductor device and integrated circuit (IC) design and manufacturing technology. For example, and not intended to be limiting, most SC devices and ICs are fabricated in and/or on substrate wafers, usually but not always single crystal SC wafers, which are then cut up (“singulated”（単一化、ダイシング、分離）) into the individual devices or ICs. The manufacturing cost can be reduced by using larger and larger wafers, since more individual devices and ICs can be produced at the same time on larger wafers. However, to avoid undue wafer breakage, the wafer thickness must generally be increased as（につれて）the wafer diameter is increased.
If only one surface of the SC die or IC is available for fabricating devices and connections, the desired degree of complexity may not be achievable with present day（現在）structures and fabrication techniques. Further, as operating speed, power handling and wafer thickness increase, efficient heat removal （放熱、熱除去）from the resulting device or IC becomes more and more difficult. Thus, there is a strong desire（望み、所望、要求）to provide electrically and thermally conductive connections between the front and rear surfaces of the devices or ICs and to minimize the device and/or IC substrate thickness, without compromising mechanical robustness of the wafers during manufacture.
It is known to use conductor filled vias through SC wafers as a means of providing electrical and thermal connections between the front and rear surfaces of the wafer and resulting individual devices and IC die. These conductor filled vias are referred to as “through-substrate-vias” or “through-semiconductor-vias” and abbreviated as “TSV” (singular) or “TSVs” (plural). However, the desire to use larger diameter and therefore thicker wafers for cost efficient manufacturing and at the same time to provide highly conductive TSVs for electrically and/or thermally coupling the front and rear faces of the wafer and resulting die are in conflict（相反）. The thicker the wafers, the more difficult it is to etch and fill narrow TSVs with conductors（すればするほど）. However, if the vias are made larger, then greater wafer and die surface area must be devoted（確保）to such vias. In the prior art, thicker wafers have generally required larger area TSVs consuming greater device and IC surface area, thereby lowering the device and IC packing density on the wafer and increasing the device and IC manufacturing cost. Trying to use large diameter thin wafers so as to maintain the device area packing density reduces the mechanical stability of the wafers. It is well known that thin wafers break more easily during device and IC processing, thereby reducing the manufacturing yield and increasing the cost of the finished devices and ICs. Thus, a need continues to exist for improved SC device and IC structures and fabrication techniques that can provide minimal area TSVs for front-side-to-back-side interconnections and thin device or IC substrates for efficient heat removal, without significantly compromising（損なう）mechanical stability of the wafers during manufacturing."
"For simplicity and clarity of illustration（説明の容易、簡素化、分かり易さ、明確）, the drawing figures illustrate the general manner of construction, and descriptions and details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the invention. Additionally, elements in the drawings figures are not necessarily drawn to scale（実寸）. For example, the dimensions（寸法）of some of the elements or regions or layers in the figures may be exaggerated relative to other elements or regions or layers to help improve understanding of embodiments of the invention.
The terms “first,” “second,” “third,” “fourth” and the like in the description and the claims, if any, may be used for distinguishing between（区別）similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation or fabrication in sequences or arrangements other than those illustrated or otherwise described herein. Furthermore, the terms “comprise（有する、具備）,” “include,” “have” and any variations thereof, are intended to cover non-exclusive inclusions, such that a process, method, article, or apparatus that comprises a list of elements or steps is not necessarily limited to those elements or steps, but may include other elements or steps not expressly listed or inherent to（固有）such process, method, article, or apparatus. The term “coupled（結合）,” as used herein, is defined as directly or indirectly connected in an electrical or non-electrical manner.
As used herein, the term “semiconductor” is intended to include any semiconductor whether single crystal, poly-crystalline or amorphous and to（toの繰り返し）include type IV semiconductors, non-type IV semiconductors, compound semiconductors as well as organic and inorganic semiconductors. Further（さらに）, the terms “substrate” and “semiconductor substrate” and “wafer” are intended to include single crystal structures, polycrystalline and amorphous structures, thin film structures, layered structures as for example and not intended to be limiting semiconductor-on-insulator (SOI) structures, and combinations thereof. The term “semiconductor” is abbreviated as “SC.” The terms “wafer” and “substrate”, singular or plural, are intended to refer to supporting structures that are relatively thin compared to their lateral surface area and used in connection with batch fabrication of electronic devices. Non-limiting examples（非限定）of such wafers and substrates include: semiconductor wafers, SOI wafers, and other types of supporting structures in or on which active and/or passive electronic elements and/or devices are fabricated or that are used in connection with the fabrication of such devices. As is common in the art of SC devices and integrated circuits (ICs), the term “metal” should be interpreted broadly so as to include any form of conductor and the term “oxide” should also be interpreted broadly so as to include any form of insulating dielectric. Non-limiting examples of such conductors are doped semiconductors, semi-metals, conductive alloys and mixtures, combinations thereof, and so forth（等）. Analogously, such insulating dielectrics may be organic or inorganic insulators. For convenience of explanation and not intended to be limiting, semiconductor devices and methods of fabrication may be described herein for silicon semiconductors but persons of skill in the art will understand that other semiconductor materials can also be used."
"By way of example and not intended to be limiting（例示、非限定）, for silicon wafers of ˜200 mm diameter, initial thickness 21 can be in the range of about 600 to 700 micrometers and for silicon wafers of ~（約、=about）300 mm diameter, initial thickness 21 can be in the range of about 700 to 800 micrometers, but other diameters and thicker or thinner wafers can also be used."
"In the example of manufacturing stage 101 and resulting structure 201, four cavities (e.g., blind vias) 30 of depth 31 are formed in substrate 20, but this is merely by way of example and not intended to be limiting（例示、非限定）. Any number of（いくつでも、何個でも）cavities (and eventual vias) 30 can be formed at the same time, spaced at various locations within or near（近く、近傍）device regions 26. In general, the lateral width of eventual vias 30 will correspond to lateral width 32 of mask openings 29 and cavities 30 and for convenience of description（説明のため、便宜上）reference number 32 is hereafter intended to also refer to the lateral width of eventual vias 30. It is desirable that（望ましい、好ましい）width 32 be as small as possible consistent with depth 31, that is, that（＊thatの繰り返し）cavities and vias 30 have an aspect ratio that is readily achievable in manufacturing. It has been found that（発見、見い出し、知見）vias having width 32 (e.g., “w”) usefully in the range of about 0.1 to 10 micrometers, more conveniently about 0.5 to 5 micrometers and preferably about 1 to 2 micrometers and depth 31 (e.g., “d”) usefully in the range of about 1 to 30 micrometers, more conveniently about 5 to 20 micrometers and preferably about 10 to 15 micrometers can be readily achieved and filled with highly conductive materials, typically metals, doped semiconductors and/or alloys or mixtures of such materials. It is desirable that depth 31 of cavities 30 exceed depth 27 of device regions 26, especially where（場合、場所）cavities 30 are closely spaced to transistors or other elements within device regions 26, but in other embodiments depth 31 may be shallower than device regions 26 depending upon the lateral location of cavities 30 relative to the transistors or other elements within device regions 26 and their desired operating potential relative to the conductors eventually provided in cavities 30."
US5920699
"The switch will send periodic SAPs (in the same manner as a router) whenever they are received and no actual SAP and/or RIP timer in the switch is required. These packets are only used by other broadcast isolation switches, routers and servers. Therefore, further broadcast reduction occurs if the switch only sends SAPs out ports from which it received SAPs or a GSQ. Broadcast RIP response packets only need to（さえすればよい）be sent out ports that have routers connected (i.e. ports where broadcast RIP responses have been received). An override may be needed to allow RIPs and SAPs to be propagated out ports that did not send them out, should a listen-only router/server exist on those ports (e.g. old jet direct cards would need this information passed)."
US8515058
"Let us call this relaxation Recrypt′ε. The main point of this relaxation is that WeakEncrypt does not need to be semantically secure for Recrypt′ε to be a secure one-way proxy re-encryption scheme, or for Recrypt′ε to be useful toward bootstrapping (as we will see below). Thus, depending on ε, WeakEncryptε can be very simple—e.g., for some schemes, and in particular for the ideal-lattice-based scheme that we describe later, WeakEncryptε might leave the input “bits” entirely unmodified. This will unfortunately not help us much in terms of making the encryption scheme bootstrappable; essentially, it will add one circuit level to what ε can evaluate. However, it will affect the eventual computational complexity of our scheme, since it will require less computation to apply the decryption circuit homomorphically to ciphertexts in which the outer encryption is weak. Another way of viewing this relaxation is that we only need to（するだけでよい、しさえすればよい）be able to evaluate non-uniform decryption circuits, where the ciphertext is “hard-wired” into the circuit (making this circuit simpler than the “normal” decryption circuit that takes the ciphertext (and secret key) as input."
US6575067
"Accordingly, in order to prevent movement of the front rail 201, the user need only to（するだけでよい、すればよい）rotate handle 117 about axis 109A, forcing the receiving portion 109R to move along axis 109A as the cam 116 and cam portion 109C become disaligned. The lower rail 201T is thus locked because of the downwardly force created by the receiving portion 109R."
US6728781
"The communication networks that we consider are not necessarily completely connected, but we assume that every pair of correct processes is connected through a fair path. We first consider a simple type of such networks, in which every link is assumed to be bidirectional8 and fair (FIG. 1a). This assumption, a common one in practice, allows us to give efficient and simple algorithms. We then drop this assumption and treat a more general type of networks, in which some links may be unidirectional and/or not fair (FIG. 1b). For both network types, we give quiescent reliable communication algorithms that use HB. Our algorithms have the following feature: processes do not need to know the entire network topology or the number of processes in the system; they only need to（するだけでよい）know the identity of their neighbors."
US7921443
"A demarcation device can be any device（どんなでも、であれば）capable of serving as an interface between a customer premises and a telecommunication service provider's network. Such devices can include, merely by way of example（例示）, set top boxes (which can be used, inter alia, as an interface between a customer's video appliance and a provider's video network), broadband modems (including xDSL modems, cable modems and wireless modems, each of which can be used to provide video and/or data to a customer premises（＊複数形）), integrated access devices (which can, for instance, translate between Voice over IP ("VoIP") signals and traditional telephone signals, thus allowing traditional telephones to connect to a VoIP network), devices compatible with the session initiation protocol ("SIP") familiar to those skilled in the art, and/or the like（等）."
US8078787
"An "intermediate device" as used herein can be any（どんなでも、であれば）device capable of being connected to a host device and an accessory at the same time. The intermediate device can be capable of communicating with the host and the accessory, in particular forwarding, or tunneling, commands from one of the host/accessory to the other. The intermediate device may also support other functionality, such as charging the host device and/or the accessory. In some instances, the intermediate device may be capable of being concurrently connected to multiple host devices and/or multiple accessories."
US7996324
"In this context, the self-service user interaction device may be any（どんなでも、であれば）device suitable for interacting with a transaction device, and receiving information from the transaction device user and providing the information to a merchant, account issuer, account manager, data set owner, merchant point of sale, and the like（等）."
Heterophoria, Wikipedia
"Heterophoria（斜位）is an eye condition in which the directions that the eyes are pointing at rest position, when not performing binocular fusion（両眼融合）, are not the same as each other, or, "not straight". There can be esophoria, where the eyes tend to cross inward in the absence of fusion, exophoria, in which they diverge, or hyperphoria, in which one eye points up or down relative to the other. Phorias（斜位）are known as 'latent squint' because the tendency of the eyes to deviate is kept latent by fusion. A person with two normal eyes has single vision (usually) because of the combined use of the sensory and motor systems（運動系）. The motor system acts to point both eyes at the target of interest; any offset is detected visually (and the motor system corrects it). Heterophoria only occurs during dissociation of the left eye and right eye, when fusion of the eyes is absent."
heter-: other than usual, different
-phoria: state, tenency (eg. euphoria (eu-: well, good; ant. dys-), ideaphoria (capacity for creative thought)
斜位（heterophoria)について
斜位の患者：a patient with heterophoria (Binocular Vision)
