静電吸着

WO2013067201
"4. The system of claim 1, wherein the loading transport mechanism（ローディング搬送機構）and the unloading transport mechanism each comprises electrostatic pickup chuck（静電吸着チャック）configured to chuck wafers from the front surface of the wafers."

WO2015042304
" In yet another embodiment, a method for transporting a substrate in a processing system is provided that includes transferring a substrate onto a substrate carrier disposed in a substrate loading station, electrostatically chucking（静電吸着）the substrate to the substrate carrier, and transferring the substrate while electrostatically chucked to the substrate carrier in a substantially vertical orientation from the substrate loading station to a processing chamber." 

WO2014099554
" The plasma resistant dielectric layer 136 may provide a breakdown voltage sufficient for performing electrostatic chucking（静電吸着）, and may protect the electrostatic chuck 150 from attack by plasmas." 

WO2010068294
" The surface of the electrostatic chuck member 510 can be charged by applying a voltage to the electrostatic electrode 518 through the terminal 520, resulting in the generation of electrostatic attraction（静電吸着）, with which attraction silicon wafer 516 can be adsorbed（吸着）on the adsorption surface, the upper surface of the electrostatic chuck ceramic member 510."

WO2010065070
" Prior art electrostatic chucks typically are prepared by depositing one or more electrostatic attraction（静電吸着）regions featuring electrodes and dielectric materials to the chuck support material, thereby forming an integrated device. The electrostatic attraction components are not normally removable from the support structure. In addition, the electrostatic attraction components of the prior art may feature relatively large pieces of the dielectric material."

WO2008039845
"In another embodiment, the voltage for operating the electrostatic chuck 316 can be supplied by a separate "chuck" power supply (not shown). One output terminal of the chucking power supply is connected to the chuck electrode. The other output terminal typically is connected to electrical ground, but alternatively may be connected to a metal body portion of the electrostatic chuck 316. In operation, the substrate is placed in contact with the dielectric material, and a direct current voltage is placed on the electrode to create the electrostatic attractive force（静電吸着力）or bias to adhere（固着）the substrate on the upper surface of the electrostatic chuck 316." 

WO2014176093
(Ab)
"An electrostatic chuck includes a heater and an electrode disposed on the heater. The electrostatic chuck also includes an insulator layer and coating disposed on the insulator, where the coating is configured to support an electrostatic field generated by the electrode system to attract（吸着）a substrate thereto."

WO2015071878
"2. Magnetic device, comprising: a housing block with a cavity extending along a longitudinal axis thereof and having at least two ferromagnetic wall portions along a longitudinal extension（長手延在方向）of the housing block that are substantially magnetically separated from one another; a switchable permanent magnet arrangement accommodated within the cavity of the housing block for magnetically interacting with the ferromagnetic wall portions; and a working face（作用面）extending along one or more of an exterior longitudinal side, top or bottom face of the housing at the least two magnetically separated wall portions of the housing block, the working face devised for attaching to（吸着する）a ferromagnetic object for magnetically securing the object in releasable manner（着脱可能に）to the device"

WO2007100571
"An electrostatic chuck may be utilized to secure（固定）a workpiece（被処理物）to a platen using electrostatic forces. The electrostatic chuck may be utilized in various systems such as in an ion implanter. In one instance, the ion implanter may be used to introduce conductivity - altering impurities into a workpiece such as a semiconductor wafer. A desired impurity material may be ionized in an ion source, the ions may be accelerated to form an ion beam of prescribed energy, and the ion beam may be directed at a front surface of the wafer. The energetic ions in the beam penetrate into the bulk of the semiconductor material and are embedded into the crystalline lattice of the semiconductor material to form a region of desired conductivity. The ion beam may be distributed over the wafer area by beam scanning, by wafer movement, or by a combination of beam scanning and wafer movement. It is desirable in the ion implanter and in other systems to provide a sufficient clamping force to firmly clamp（吸着；＊固定、クランプ）the workpiece to the platen. It is also desirable to quickly clamp and release the workpiece from the platen"

WO200630069
"Electrically conductive layers 310 may be configured as electrodes 310 to generate an electrostatic field within third layer 306 for clamping（吸着）object 307 to clamping surface 306a, according to an example embodiment."

WO201349589
"For example, as discussed above the plurality of electrodes 126 may be utilized to secure（固定）the substrate 101 to the processing surface 128 of the electrostatic chuck 1 10. For example, in some embodiments, the plurality of electrodes 126 as arranged in Figures 4A-B may utilized for controlled de-chucking（デチャック）from the electrostatic chuck 1 10, to chuck（チャック吸着）bowed（弓形に湾曲）substrates, or the like. For example, during de-chucking, gas may still be flowing through the grooves 124 and/or the pressure in the grooves may be higher than the pressure in the processing volume 108. Accordingly, for example, to prevent the substrate 101 from jumping off（勢いよく外れる）the electrostatic chuck 1 10, some of the electrodes 126 may be turned off prior to others to gradually de-chuck the substrate 101 . For example, during chucking, larger substrates, such as 400 millimeter or greater, may be bowed. Accordingly, to flatten（平らにする）a bowed substrate against the electrostatic chuck 1 10, some of the electrodes 126 may be operated at a higher power and/or frequency that others of the electrodes 126 to flatten out the substrate."