液浸冷却

US7016383
(Title)
"Immersion-cooled（液浸冷却の）monolithic laser diode array and method of manufacturing the same"

(Ab)
"A laser diode array is formed on a substrate ( 310 ) in which a number of parallel grooves ( 312 ) are formed. A metal layer ( 410 ) is formed on the grooves ( 312 ). Laser diode bars ( 314 ) are fitted in alternate grooves, and every other groove is left vacant to serve as a cooling channel ( 316 ). The array is immersion cooled（液浸冷却）in a housing ( 210 ). Liquid coolant is circulated through the housing ( 210 ) and through a heat exchanger ( 216 ). The liquid coolant flows over a major surface of the substrate ( 310 ) and through the cooling channels ( 316 ). Thus, heat is removed by circulating fluid from three sides of the laser diode bars ( 314 ). Such high-performance cooling permits the laser diode array to have a greater power density."

US2017354066(JP)
"1. A liquid immersion cooling（液浸冷却）apparatus that cools an electronic device including a heat generating element, the apparatus comprising:

a liquid immersion tank that accommodates a cooling liquid and the electronic device to be immersed in the cooling liquid;
a wall that is disposed within the liquid immersion tank, the wall having a protrusion protruding toward the electronic device; and
a drive mechanism that moves a position of the protrusion along the electronic device."

周方向全体、全周

US2017159474
"7. A steam turbine rotor assembly comprising:
a rotor body having a slot extending substantially entirely circumferentially about（周りの周方向全体に実質的に延在）a primary axis of the rotor body, the slot including:

a primary slot extending substantially an entire circumferential distance about（周りの周方向の距離全体に実質的に延在）the rotor body; and

a secondary slot extending axially from the primary slot and spanning（わたる；＊亘る）only a portion of the circumferential distance about the rotor body;
a circumferential seal within the primary slot spanning substantially the entire circumferential distance about the rotor body;
a set of seal retaining members within the primary slot contacting an axial face of the circumferential seal; and
a rotor key member within the secondary slot contacting the axial face of the circumferential seal, the rotor key member including a hook engaging a radially inner surface of the circumferential seal."

US2005242585
"1. A method for connecting pipe elements together end-to-end（端同士を接続）, said pipe elements having circumferential（周方向全体に延びる）grooves proximate to （近傍）each end, said method comprising: 

providing a coupling comprising a plurality of segments joined end-to-end by a plurality of adjustably tightenable fasteners, each of said segments having a pair of keys projecting radially inwardly, said keys being positioned in spaced apart relation from one another（相互に離間して）and defining a space therebetween, at least one of said keys on one of said segments having a first camming surface positioned adjacent to one end of said segment, said first camming surface facing away from said space between said keys and being angularly oriented relatively thereto;

positioning a first and a second of said pipe elements in end-to-end relation;
positioning said plurality of segments surrounding ends of said first and second pipe elements;
engaging said first camming surface with said groove in one of said first and second pipe elements;
applying said fasteners to said segments; and
tightening said fasteners so as to draw said segments toward one another, said first camming surface sliding into said groove and thereby moving said first and second pipe elements away from one another." 

WO2004096428
"1. An apparatus for distributing solid particles into a tube, comprising: a center member; and a plurality of damper members connected to the center member, wherein the plurality of damper members is arranged on the center member to provide substantially circumferential coverage along a longitudinal length of（縦方向の長さに沿って周方向全体をカバー）the tube and the damper member itself lacks substantial coverage of a cross section of the tube."

WO2004094895
"36. The lantern of claim 33, wherein the band extends all the way around（周方向全体にわたって）the globe."

GB2379610
"3. A device according to Claim 1 or 2, wherein the gas bubbles are provided around the entire circumference of（周方向全体にわたって）the device."

US2016218465
"22 （＊6 of JP）. The shielding system as recited in claim 21, wherein the shielding system has, in at least one of the housing-side sleeve area and in the cable-side sleeve area, a fastening strip running in a circumferential direction externally around（周方向で全周にわたって）the shielding sleeve, the fastening strip being fashioned to produce a press-on pressure on respective external surfaces of the contact clips, or a press-on pressure on the cable shielding in a direction of the jacket surfaces of the shielding sleeve, so that the contact clips or the cable shielding are fastened on the respective jacket surfaces of the shielding sleeve."

入り込む

US2012299116; JP
"1. A display panel comprising: 
a transistor array substrate having a plurality of drive units arranged in a matrix, each drive unit including a thin-film transistor element;
an interlayer insulation film formed on the transistor array substrate and having contact holes, the contact holes corresponding one-to-one to the drive units; and
a plurality of pixel electrodes arranged on the interlayer insulation film in a matrix, the pixel electrodes corresponding one-to-one to the drive units, wherein
the drive units include a faulty drive unit and a non-faulty drive unit,
the pixel electrodes include a first pixel electrode and a second pixel electrode, the first pixel electrode corresponding to the faulty drive unit, and the second pixel electrode corresponding to the non-faulty drive unit,
a portion of the second pixel electrode is embedded in（入り込むように形成）the contact hole corresponding thereto, and is in contact with a power supply pad of the non-faulty drive unit so that the second pixel electrode is electrically connected to the non-faulty drive unit, and
an insulator is inserted between the first pixel electrode and a power supply pad of the faulty drive unit so that the first pixel electrode is electrically insulated from the faulty drive unit."

when

when:
1) at or during; while

2) just after

3) in the event; if

(Merriam-Webster Unabridged)

ファセット面

EP1917687
"1. A semiconductor laser device, comprising: 
a substrate; 
an epitaxially grown layer structure on said substrate; 
a laser cavity of length lc formed in said epitaxially grown layer, said laser cavity having at least one etched facet surface（ファセット面）perpendicular to the substrate plane; 
a chip of length ls produced from said substrate by singulation（個片化）and incorporating said laser cavity, with ls being greater than said laser cavity length lc; 

said chip having a distance h from the center（中心；＊定冠詞）of a beam axis of said laser cavity to an etched top surface of said chip and a distance a from the edge of said chip to the said etched facet; 
said laser cavity being capable of producing a laser output beam with a full-width-half-maximum（半値全幅）vertical far-field angle（垂直遠視野角）-; and 

wherein the ratio h/a that is equal or greater than（等しいか、または大きい） 

[mathematical formula - see original document]"

WO2009138760
"5. A device according to any preceding claim wherein the pore has a conical, tapered, cylindrical, picture frame（額縁状；＊額縁形）, etch pit of [111] facets（ファセット面）in a [100] face（＊結晶面）of the diamond thin film substrate, or hemispherical geometry."

WO2007098215
"1. A device, comprising: 
(a) one or more oblique or facetted surfaces（ファセット面）of a substrate or template."

WO2007025032
"1. A semiconductor laser device, comprising: a substrate; an epitaxially grown layer structure on said substrate; a laser cavity of length /c formed in said epitaxially grown layer, said laser cavity having at least one etched facet surface（ファセット面）perpendicular to the substrate plane; a chip of length /s produced from said substrate by singulation and incorporating said laser cavity, with ls being greater than said laser cavity length /c; said chip having a distance h from the center of a beam axis of said laser cavity to an etched top surface of said chip and a distance a from the edge of said chip to the said etched facet; said laser cavity being capable of producing a laser output beam with a full-width-half-maximum vertical far-field angle &[deg.]; and wherein the ratio h/a that is equal or greater than 

Image available on "Original document""

WO9411930
"5. A method of fabricating a device structure from a starting wafer（素材ウエーハ）having a heterostructure material grown on a substrate, comprising the steps of: masking the wafer with a first mask pattern having exposure windows corresponding to device regions of said wafer; controllably etching through（蝕刻）the exposed device regions of said wafer, patterned by the first mask pattern, to define a ridge waveguide area（うね形導波領域）and a fiber-receiving area; masking the wafer with a second mask pattern having exposure windows corresponding to areas for forming facet surfaces（ファセット面）in said ridge waveguide area; controllably etching through the exposed regions of said wafer, patterned by the second mask pattern, to define a lasing region（レーザ部）and a detection region; masking the wafer with a third mask pattern having an exposure window corresponding to said fiber-receiving area; and controllably etching through the exposed regions of said wafer, patterned by the third mask pattern, to define a fiber-receiving channel（受容溝）in said wafer."

法線方向

WO2015184549
"19. A method according to claim 18 wherein the light is incident on the phase
modulator in a direction normal to（法線方向）the lens plane."

WO2015006392
"5. A process of creating（作製）a doped vertical channel in a three- dimensional structure, where said vertical channel is surrounded by an oxide-nitride-oxide (ONO) stack, 
comprising : etching a hole through（エッチングにより・・・貫通する穴を穿設）said ONO stack; depositing a polycrystalline silicon material along sidewalls（側壁；＊初出無冠詞複数）in said hole; and implanting dopant ions into said polycrystalline silicon material at an angle offset from a direction normal to（法線方向）a surface of said three-dimensional structure, wherein said ions pass through a portion of said ONO stack before reaching said polycrystalline silicon material." 

WO2006125224
"41. The synthetic optical image system of claim 39, wherein the coating material is aluminum that is substantially transparent when viewed from a direction normal to（法線方向から見）the plane of the icon layer and the reflectivity of the coating layer increases with increasing angle of incidence so that the sides of the coated icon elements appear more reflective resulting in the appearance of a high-contrast outline of the icon elements."