WO2009111168(特表2011-513748)
"18. The circuit of claim 11 wherein the linear magnetic field sensor comprises a magnetoresistive element（磁気抵抗効果素子）to sense a magnetic field."
WO2012001555(特表2013-537704)
"Further, document US 2005/0242384 Al describes a magnetic memory device comprising a magneto-resistance effect element（磁気抵抗効果素子）that is provided at an intersection between a first write line and a second write line."
WO2005112034(特表2007-537608)
"1. A magnetic element comprising: a pinned layer（ピン止め層）; a spacer layer, the spacer layer being nonmagnetic; and a free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer; and a spin barrier layer, the free layer residing between the spin barrier layer and the spacer layer, the spin barrier layer configured to reduce an outer surface contribution to a damping constant of the free layer; wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current（書き込み電流）is passed through the magnetic element."
"Thus, the critical current Ie is proportional to the Gilbert damping parameter a of the conventional free layer 18'. This is believed to be equally applicable to spin transfer in conventional spin valve magnetoresistance effect element（磁気抵抗効果素子）such as 10 and conventional current confined magnetoresistance effect element 10". The Gilbert damping parameter a is a dimensionless parameter, which quantifies the level of dynamic damping experienced by the conventional free layer magnetization 18'."
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