US2022262801(APPLIED MATERIALS INC [US])
[0007] The dielectric material of the capacitor is formed by conformal deposition process on top of a bottom electrode, such as TiN, after mold oxide PSG & BPSG are removed.
【０００６】
[0006] キャパシタの誘電材料は、モールド酸化物PSG及びBPSG（ホウ素・リン・ケイ酸塩ガラス）を除去した後で、ＴｉＮなどの下部電極の上にコンフォーマル堆積プロセスによって形成される。
However, these dielectric materials have a very limited charge storage capacity due to their low dielectric constant.
しかし、これらの誘電材料は誘電率が低いため、電荷蓄積容量が非常に限られている。
As the DRAM BitLine (BL) pitch scales to become smaller, such as less than 40 nm for d13 node, the reduction in the BL pitch needed to increase DRAM density also requires a similar percent reduction in the capacitor (capacitor) pitch, to prevent overlay errors.
DRAMのビットライン（BL）ピッチがd13ノードで４０nm以下などと微細化するのに伴い、DRAMの高密度化に必要なBLピッチの縮小には、オーバーレイエラーを防止するためのキャパシタ（capacitor）ピッチも同程度縮小する必要がある。
As a result of the capacitor pitch reduction, the amount of the capacitor critical dimension (CD) is required to be similarly reduced.
キャパシタのピッチを小さくした結果、キャパシタの限界寸法（CD）も同様に小さくする必要がある。
Thus, the area available for capacitor dielectric material is also reduced by a similar percent as part of DRAM unit cell reduction.
したがって、キャパシタの誘電材料に使用できる面積も、DRAMのユニットセル削減の一環として、同様の割合で削減される。
EP4292156(HARVARD COLLEGE [US])
The all-vanadium redox flow battery chemistry is currently the most technologically developed but may not access much of the grid storage market due to electrolyte cost constraints.
【０００３】
全バナジウムレドックスフロー電池の化学的性質は現在最も技術的に開発されているが、電解質コストの制約によりグリッドストレージ市場にはあまり参入できない。
Emerging organic electrolytes comprising cheaper earth-abundant elements may address this limitation.
地球上に豊富に存在する安価な元素を含む新たな有機電解質は、この制限に対処することができる。
However, organic electrolytes are more prone to molecular decomposition, which can lead to a progressive loss of charge storage capacity.
しかし、有機電解質は分子分解しやすいため、電荷蓄積容量が徐々に失われる可能性がある。
Accordingly, there is a need for mechanisms to reverse decomposition.
従って、分解を逆転させるメカニズムが必要である。
＊capacitance: the property of an electric nonconductor, a part of a circuit or network that possesses capacitance (Merriam-Webster)
US10379657(APPLE INC [US])
[0206] In some embodiments, sensing circuitry is operatively coupled to the capacitive sense layer 1705 and the sheet sensor 1520 . The sensing circuitry may be configured to estimate the force of a touch on the cover based on a change in mutual capacitance between the capacitive sense layer 1705 and the upper and/or capacitive plate of the sheet sensor 1520 . In some embodiments, the sensing circuitry may be configured obtain a first capacitance between the upper capacitive plate and the lower capacitive plate of the sheet sensor and also obtain a second capacitance between the upper capacitive plate and the capacitive sense layer. An estimate of a force of a touch on the cover may be computed or generated using the first and second capacitances measured using the sensing circuitry.
US7538304(APTINA IMAGING CORP [KY])
1. A method of operating an imaging device, said method comprising the acts of:
resetting a pixel floating diffusion region;
electrically connecting a plurality of capacitances to a pixel output line simultaneously;
sampling from the line a first signal from the reset floating diffusion region;
removing only a first capacitance of the plurality of capacitances from the line;
transferring charge from a first photosensitive device to the floating diffusion region; and
sampling from the line a second signal from the floating diffusion region.
