According to Fact.MR’s new report, the global market for GaN RF devices is poised to register a splendid rise through the forecast period (2017-2026). Over US$ 1,600 Mn worth of GaN RF devices are estimated to be sold around the world by 2026-end.
The global GaN RF devices market will continue to be driven by GaN’s wide bandgap property that encourages innovation, growing demand for GaN RF devices in aerospace, defense & military verticals, and successful implementation of GaN technology in RF-power electronics. This report,
compiled by Fact.MR, provides in-depth analysis of the global GaN RF devices market for the forecast period 2017-2026, offering key insights on the growth prospects of the market.
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https://www.factmr.com/connectus/sample?flag=S&rep_id=383
APEJ to Remain Dominant Market for GaN RF Devices
The market for GaN RF devices is expected to witness the fastest expansion in Asia-Pacific excluding Japan (APEJ) through 2026. APEJ will also remain the dominant market for GaN RF devices, followed by Japan and North America. The markets in these regions is primarily being driven by increasing GaN RF devices application in defense sector, and large-scale growth of 4G networks. Presence of numerous GaN RF device manufacturers in APEJ is the main reason for its dominance in the global market.
Owing to large-scale 4G network deployment, the need for base stations and high-power transistors is increasing, thereby creating robust demand for wireless infrastructure. In addition, growing adoption of tablets, computers and smartphones, emergence of 5G network, and proliferation of IoT will further create growth avenues for wireless infrastructure. Wireless infrastructure will remain the largest application of GaN RF devices, followed by PV inverter.
More and more sectors are incorporating RF technology in their operating systems, creating new application areas for RF engineers to work on. Selection of an RF technology depends majorly on the heat, size, cost, power, advancement rate, efficiency, and speed required for the application. GaN RF devices are highly preferred for such applications. GaN RF technology has emerged as an effective choice for all new millimeter-wave and microwave electronics such as electronic warfare, communications, satellite and radar.
Key market players comprised in the report are Infineon, Renesas, Panasonic, Mitsubishi Electric, Toshiba, Hitachi, STMicroelectronics, Bosch, Sumitomo Electric, and Raytheon.
The global GaN RF devices market will continue to be driven by GaN’s wide bandgap property that encourages innovation, growing demand for GaN RF devices in aerospace, defense & military verticals, and successful implementation of GaN technology in RF-power electronics. This report,
compiled by Fact.MR, provides in-depth analysis of the global GaN RF devices market for the forecast period 2017-2026, offering key insights on the growth prospects of the market.
Get Free Sample Report Here:
https://www.factmr.com/connectus/sample?flag=S&rep_id=383
APEJ to Remain Dominant Market for GaN RF Devices
The market for GaN RF devices is expected to witness the fastest expansion in Asia-Pacific excluding Japan (APEJ) through 2026. APEJ will also remain the dominant market for GaN RF devices, followed by Japan and North America. The markets in these regions is primarily being driven by increasing GaN RF devices application in defense sector, and large-scale growth of 4G networks. Presence of numerous GaN RF device manufacturers in APEJ is the main reason for its dominance in the global market.
Owing to large-scale 4G network deployment, the need for base stations and high-power transistors is increasing, thereby creating robust demand for wireless infrastructure. In addition, growing adoption of tablets, computers and smartphones, emergence of 5G network, and proliferation of IoT will further create growth avenues for wireless infrastructure. Wireless infrastructure will remain the largest application of GaN RF devices, followed by PV inverter.
More and more sectors are incorporating RF technology in their operating systems, creating new application areas for RF engineers to work on. Selection of an RF technology depends majorly on the heat, size, cost, power, advancement rate, efficiency, and speed required for the application. GaN RF devices are highly preferred for such applications. GaN RF technology has emerged as an effective choice for all new millimeter-wave and microwave electronics such as electronic warfare, communications, satellite and radar.
Key market players comprised in the report are Infineon, Renesas, Panasonic, Mitsubishi Electric, Toshiba, Hitachi, STMicroelectronics, Bosch, Sumitomo Electric, and Raytheon.
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