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ウェット洗浄

2017-06-30 12:27:47 | 英語特許散策

WO2005123282(特表2008-506530)
(Ab)
"Methods for wet cleaning(ウェット洗浄)quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with(接触させる)at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times."

WO2008019282(特表2009-545895)
"10. The method of claim 9, wherein cleaning the substrate comprises a wet clean(ウェット洗浄)process."

US7585759(特表2009-503852)
"2. The method of claim 1, wherein cleaning(洗浄)said second layer comprises removing particles from said second layer.

3. The method of claim 1, wherein said cleaning further comprises performing a wet clean(ウェット洗浄)process after said second sweep operation."

WO9639266(特表2001-527697)
"Wet versus Drv Processing
One of the long-running technological shifts in semiconductor processing has been the changes (and attempted changes) between dry and wet processing. In dry processing, only gaseous or plasma-phase reactants come in contact with(接触する)the wafer. In wet processing, a variety of liquid reagents are used for purposes such as etching silicon dioxide or removing native oxide layers(自然酸化膜), removing organic materials or trace organic contaminants, removing metals or trace organic contaminants, etching silicon nitride, etching silicon.

Plasma etching has many attractive capabilities, but it is not adequate for cleanup(洗浄). There is simply no available chemistry to remove some of the most undesirable impurities, such as gold. Thus wet cleanup(ウェット洗浄)processes are essential to modern semiconductor processing, and are likely to remain so for the foreseeable future."

"To set up the process one must determine the concentration of total HF and NH3 to be dissolved in water. For example, 1 kg. of 40% by weight ammonium, fluoride solution would contain 400 g of NH4F and 600 g of ultra pure water(超純水). Since the mole ratio of HF to NH3 is 1:1 for pure NH4F the 400 g of NH4F would include 216 g of anhydrous HF and 184 g of anhydrous NH3. (MW NH4F 237, MW HF = 20, MW NH3 - 17)."

WO2015148055(特表2017-509149)
"Various wet and dry cleaning(洗浄)methods are known in the art. In some embodiments, a dry etching or cleaning process can be used such as, without limitation, a plasma-free gas chemical etch system targeted at selective oxide film etching using a Certas machine available from Tokyo Electron Limited (TEL) of Japan"

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